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TGA2583 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TGA2583 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 15 page TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Preliminary Datasheet: Rev B 02-20-15 - 2 of 15 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) 40V Gate Voltage Range (VG) -8 to 0V Drain Current (ID1) 285mA Drain Current (ID2) 1250mA Gate Current (IG1) -1.4 to 2.8mA Gate Current (IG2) -4.0 to 8.4mA Power Dissipation (PDISS), 85°C 25W Input Power (PIN), CW, 50 Ω, 85°C, 30dBm Input Power (PIN), CW, VSWR 10:1, VD = 28V, 85°C 23dBm Channel Temperature (TCH) 275°C Mounting Temperature (30 Seconds) 320°C Storage Temperature -55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) 25V Drain Current (IDQ) 175mA (Total) Gate Voltage (VG) -2.3V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 250C, VD = 25V, IDQ = 175mA, VG = -2.3V Typical, Pulsed VD : PP = 1ms, DC = 10% Parameter Min Typical Max Units Operational Frequency Range 2.7 3.7 GHz Small Signal Gain 33 dB Input Return Loss >18 dB Output Return Loss >12 dB Output Power (Pin = 16dBm) 40.5 dBm Power Added Efficiency (Pin = 16dBm) 54 % IM3 @ POUT/Tone = 30dBm -25 dBc IM5 @ POUT/Tone = 30dBm -35 dBc Small Signal Gain Temperature Coefficient -0.05 dB/°C Output Power Temperature Coefficient -0.005 dBm/°C Recommended Operating Voltage: 25 32 V |
Similar Part No. - TGA2583_15 |
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Similar Description - TGA2583_15 |
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