TGA2595-CP_15 datasheet(3/13 Pages) TRIQUINT

Part #	TGA2595-CP

Description	27.5 to 31 GHz, 8 W GaN Power Amplifier

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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3 / 13 page

TGA2595-CP

27.5 to 31 GHz, 8 W GaN Power Amplifier

Preliminary Datasheet: 01-22-15

- 3 of 13 -

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Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (

θJC) (1)

CW, VD = 20 V, IDQ = 560 mA,

TBASE = 85°C PDISS =11.2 W

3.3

°C/W

Channel Temperature (TCH) (Quiescent)

125

°C

Median Lifetime (TM)

4.0E+13

Hrs

Thermal Resistance (

θJC) (1)

VD = 20 V, IDQ = 280 mA, TBASE = 85°C,

Freq = 29 GHz, PIN = 18 dBm, POUT = 37.9 dBm,

PDISS =21.2 W, ID_Drive = 1.37 A

3.61

°C/W

Channel Temperature (TCH) (under RF drive)

170

°C

Median Lifetime (TM)

5.9E+10

Hrs

Thermal Resistance (

θJC) (1)

VD = 20 V, IDQ = 560 mA, TBASE = 85°C,

Freq = 29 GHz, PIN = 18 dBm, POUT = 39.4 dBm,

PDISS =27.6 W, ID_Drive = 1.81 A

3.76

°C/W

Channel Temperature (TCH) (under RF drive)

197

°C

Median Lifetime (TM)

2.2E+9

Hrs

Notes:

1.

Thermal resistance measured to back of package.

Test Conditions: VD = 22 V; Failure Criteria = 10% reduction in ID_MAX

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

Frequency (GHz)

Dissipated Power vs. Freq. vs. I

DQ

P

in = 18 dBm,

T = 85 °C

560 mA

280 mA

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1E+13

1E+14

1E+15

1E+16

1E+17

1E+18

75

100

125

150

175

200

225

250

275

Channel Temperature, T

CH (C)

Median Lifetime vs. Channel Temperature

FET16

20

21

22

23

24

25

26

27

28

29

30

27

28

29

30

31

32

Frequency (GHz)

Dissipated Power vs. Freq. vs. Temp.

P

in = 18 dBm

25 °C

85 °C

-40 °C

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