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TGA2599-SM Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGA2599-SM Datasheet(HTML) 1 Page - TriQuint Semiconductor |
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1 / 17 page  TGA2599-SM 5.0-8.0 GHz GaN Driver Amplifier Preliminary Datasheet: Rev–A 02-20-15 - 1 of 17 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Applications • C-Band Radar • Communications Product Features Functional Block Diagram • Frequency Range: 5.0-8.0 GHz • Small Signal Gain: > 23 dB • Power: > 33 dBm • PAE: > 34% • IM3: -25 dBc • Bias: VD = 25 V, IDQ = 50 mA • Package Dimensions: 4.0 x 4.0 x 0.85 mm General Description Pad Configuration TriQuint's TGA2599-SM is a packaged driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. The TGA2599-SM operates from 5.0 to 8.0GHz and provides 33 dBm of output power with 15 dB of large signal gain and 34 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the TGA2599-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the primary amplifier on lower power architectures. The TGA2599 is offered in a small 4 x 4 mm plastic overmold QFN, fully matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Lead-Free & RoHS compliant. Evaluation Boards are available on request. Pad Number Symbol 3 RF Input 6 VG1 8 VG2 13 RF Output 17 VD2 19 VD1 1-2,4-5,7,9-12,14-16,18, 20, 21 GND Ordering Information Part ECCN Description TGA2599-SM EAR99 5.0-8.0 GHz GaN Driver Amplifier |
Similar Part No. - TGA2599-SM_15 |
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Similar Description - TGA2599-SM_15 |
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