TGA2618_15 datasheet(3/11 Pages) TRIQUINT

Part #	TGA2618

Description	16 to 18 GHz GaAs LNA

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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TGA2618

16 - 18 GHz GaAs LNA

Preliminary Datasheet: Rev - 09-09-14

- 3 of 11 -

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Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (

θJC) (1)

Tbase = 85 °C, VD = 3 V (CW)

IDQ = 30 mA, PDISS = 0.09 W

96

ºC/W

Channel Temperature (TCH) (Without RF)

94

°C

Median Lifetime (TM)

1.3 x 10^9

Hrs

Thermal Resistance (

θJC) (1)

Tbase = 85 °C, VD = 3 V (CW)

IDQ = 30 mA, ID_Drive = 50 mA

PIN = -10 dBm, POUT = 10 dBm,

Freq = 17 GHz, PDISS = 0.14 W

96

ºC/W

Channel Temperature (TCH) (Under RF drive)

98

°C

Median Lifetime (TM)

7.5 x 10^8

Hrs

Notes:

1.

Thermal resistance calculated at back of a 40 mil CuMo carrier plate with 1.5 mil of AuSn solder for die attach.

Test Conditions: VD = 6 V; Failure Criteria is 10% reduction in ID_MAX

1E+03

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1E+13

1E+14

1E+15

25

50

75

100

125

150

175

200

Channel Temperature, T

CH (°C)

Median Lifetime vs. Channel Temperature

FET5

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