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TGA2622 Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TGA2622
Description  9 to 10GHz 40W GaN Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2622 Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TGA2622
9
– 10GHz 40W GaN Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
- 2 of 14 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
40V
Gate Voltage Range (VG)
-10 to -2V
Drain Current (ID1-2)
2.3A
Drain Current (ID3)
4.3A
Gate Current (IG1-2)
-3.5 to 17.5mA
Gate Current (IG3)
-11 to 28mA
Power Dissipation (PDISS), 85°C, CW
96W
Input Power (PIN), CW,
50Ω,
VD = 28V, 85°C
24dBm
Input Power (PIN), CW, VSWR 6:1,
VD = 28V, 85°C
20dBm
Channel Temperature (TCH)
275°C
Mounting Temperature (30 seconds)
320°C
Storage Temperature
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
28V
Drain Current (IDQ)
290mA (Total)
Gate Voltage (VG)
-2.7V (Typ.)
Electrical specifications are measured at specified test conditions.
Specifications
are
not
guaranteed
over
all
recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 28V, IDQ = 290mA, VG = -2.7V Typical, Pulsed VD: PW = 100us, DC = 10%
Parameter
Min
Typical
Max
Units
Operational Frequency Range
9
10
GHz
Small Signal Gain
32
dB
Input Return Loss
>12
dB
Output Return Loss
>8
dB
Power Gain (Pin = 18dBm)
28
dB
Output Power (Pin = 18dBm)
46
dBm
Power Added Efficiency (Pin = 18dBm)
>46
%
Power @ 1dB Compression (P1dB)
>40
dB
Small Signal Gain Temperature Coefficient
-0.076
dB/°C
Recommended Operating Voltage:
20
28
32
V


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