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TGA2625-CP Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGA2625-CP Datasheet(HTML) 1 Page - TriQuint Semiconductor |
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1 / 15 page  TGA2625-CP 10 to 11 GHz, 17 W GaN Power Amplifier Preliminary Datasheet: 11-03-14 - 1 of 15 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Applications Radar Communications Functional Block Diagram Product Features Frequency Range: 10 – 11 GHz Pout: 42.5 dBm (at PIN = 15 dBm) PAE: > 40 % Power Gain: 28 dB (at PIN = 15 dBm) Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %) Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Ordering Information Part ECCN Description TGA2625-CP 3A001.b.2.b 10 – 11 GHz, 17 W GaN Power Amplifier General Description TriQuint’s TGA2625-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a power-added efficiency of > 40 %, and power gain of 28 dB. The TGA2625-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under CW and pulsed conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2625-CP is ideally suited for both commercial and defense applications. Lead free and RoHS compliant. Evaluation Boards are available upon request. Pin Configuration Pad No. Symbol 1, 5 VG 2, 4, 7, 9 GND 3 RFIN 6, 10 VD 8 RFOUT 6 7 8 9 10 5 4 3 2 1 |
Similar Part No. - TGA2625-CP_15 |
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Similar Description - TGA2625-CP_15 |
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