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TGA3504-SM Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA3504-SM Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 11 page TGA3504-SM 2 - 30 GHz GaAs Wideband Gain Block Preliminary Datasheet: Rev - 09-18-14 - 3 of 11 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance ( θJC) (1) Tbase = 85 °C, V+ = 5 V VD = 3 V, VCTRL = 0 V, IDQ = 50 mA, PDISS = 0.21 W 48 ºC/W Channel Temperature (TCH) (No RF drive) 95 °C Median Lifetime (TM) 1.2 x 10^9 Hrs Thermal Resistance ( θJC) (1) Tbase = 85 °C, V+ = 5 V (CW) VD = 3 V, VCTRL = 0 V, IDQ = 50 mA, ID_Drive = 58 mA PIN = 5 dBm, POUT = 11 dBm, Freq = 16 GHz, PDISS = 0.16 W 42 ºC/W Channel Temperature (TCH) (Under RF drive) 92 °C Median Lifetime (TM) 1.8 x 10^9 Hrs Notes: 1. Thermal resistance measured at back of the package. Test Conditions: VD = 6 V; Failure Criteria is 10% reduction in ID_MAX 1E+03 1E+04 1E+05 1E+06 1E+07 1E+08 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 25 50 75 100 125 150 175 200 Channel Temperature, T CH (°C) Median Lifetime vs. Channel Temperature FET5 |
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