2

TGA4043

May 2009 © Rev -

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Positive Supply Voltage

8 V

2/

Negative Supply Voltage Range

-5V TO 0V

Positive Supply Current

960 mA

2/

Gate Supply Current

56 mA

Input Continuous Wave Power

27 dBm

2/

Power Dissipation

7.5 W

2/, 3/

Operating Channel Temperature

200 °C

4/, 5/

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature

-65 to 150 °C

1/

These ratings represent the maximum operable values for this device.

2/

Current is defined under no RF drive conditions. Combinations of supply voltage, supply

3/

When operated at this power dissipation with a base plate temperature of 70 °C, the median

life is 7.3E3 hours.

4/

Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest

possible levels.

5/

These ratings apply to each individual FET.

TABLE II

DC PROBE TEST

SYMBOL

PARAMETER

MINIMUM

MAXIMUM

UNIT

Saturated Drain Current

40

188

mA

Transconductance

88

212

mS

-1.5

-0.5

V

Breakdown Voltage Gate-

Drain

-30

-8

V

Breakdown Voltage Gate-

Source

-30

-8

V