2

TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com

Oct 2008 © Rev A

TGA4530

TABLE I

ABSOLUTE MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Positive Supply Voltage

8 V

Vg

Negative Supply Voltage Range

-5 V TO 0 V

Id

Positive Supply Current

1.75 A

Gate Supply Current

35 mA

Input Continuous Wave Power

26 dBm

Power Dissipation

14.0 W

Tchannel

Channel Temperature

200 °C

2/

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature

-65 to 200 °C

1/

These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device

lifetime. These are stress ratings only, and functional operation of the device at these conditions is not

implied.

.2/

Junction operating temperature will directly affect the device median lifetime. For maximum life, it is

recommended that junction temperatures be maintained at the lowest possible levels.

PARAMETER

TYPICAL

UNITS

Frequency Range

17 - 21

GHz

Drain Voltage, Vd

7

V

Drain Current, Id

825

mA

Gate Voltage, Vg

-0.45

V

Small Signal Gain, S21

20

dB

Input Return Loss, S11

20

dB

Output Return Loss, S22

20

dB

Saturated Output Power @ Pin = 16dBm, Psat

32

dBm

Output Power @ 1dB Gain Compression, P1dB

30

dBm

Output Third Order Intercept, OTOI @ 20dBm/Tone

42

dBm

Small Signal Gain Temperature Coefficient

-0.03

dB/

Noise Figure @ 19GHz

6

dB

TABLE II

ELECTRICAL CHARACTERISTICS

(Ta = 25 °C Nominal)