4

TGA4538

Table IV

Power Dissipation and Thermal Properties

Parameter

Test Conditions

Value

Maximum Power Dissipation

Tbaseplate = 70 °C

Pd = 6.5 W

Tchannel = 200 °C

Tm = 7.1 E+3 Hrs

Thermal Resistance, θjc

Vd = 5 V

Id = 600 mA

Pd = 3.0 W

θjc = 19.9 °C/W

Tchannel = 129 °C

Tm = 1.1 E+7 Hrs

Thermal Resistance, θjc

Under RF Drive

Vd = 5 V

Id = 1000 mA

Pout = 29.5 dBm

Pd = 4.1 W

θjc =19.9 °C/W

Tchannel = 152 °C

Tm = 8.1 E+5 Hrs

Mounting Temperature

30 Seconds

320 °C

Storage Temperature

-65 to 150 °C

Median Lifetime vs Channel Temperature

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

25

50

75

100

125

150

175

200

Channel Temperature (°C)

FET5

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

December 2010 Rev B