TGA4943-SL

Table IV

Power Dissipation and Thermal Properties

1/

Channel operating temperature will directly affect the device median lifetime (Tm). For maximum life,

it is recommended that channel temperatures be maintained at the lowest possible levels.

2/

θ

jc is modeled based upon hottest stage (stage 3) because there is negligible thermal coupling

Parameter

Test Conditions

Value

Notes

Thermal Resistance, θjc

Vd = 7 V

Idq_tot = 300 mA

Idq3=190 mA

Pd_stage3 = 1.33 W

Tbaseplate = 85 °C

θ

jc = 39.4 °C/W

Tchannel = 137.4 °C

Tm = 4.3 E+6 Hrs

1/, 2/

Thermal Resistance, θjc

Under RF Drive

Vout = 8 Vpp, Vd = 7V

Id3 = 190 mA

Pd_stage3 =1.17 W

Tbaseplate = 85 °C

θ

jc = 39.4 °C/W

Tchannel = 131 °C

Tm = 9.2 E+6 Hrs

Storage Temperature

-65 to 150 °C

Case Operating Range

-65 to 150 ºC

3/

6

May 2011 © Rev E

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 info-networks@tqs.com

2/

θ

jc is modeled based upon hottest stage (stage 3) because there is negligible thermal coupling

between stages. It is the thermal resistance of the part calculated from the junction to the bottom of

the TGA4943-SL package.

To calculate the temperature rise, calculate the dissipated power in the third stage (Pdiss = Idq3*Vd3)

and multiply by θjc. For example: Tbase = 85

θ

jc=39.4 °C/W. Temperature rise = θjc*Pdiss = 52.4 C; Tchannel = Tbase + Temp rise = 137.4

3/

Case operating range values are for reference only. Channel temperature must not exceed maximum

ratings value and must be at value acceptable to customer lifetime requirements.

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

25

50

75

100

125

150

175

200

Channel Temperature ( C)

FET5

°

Median Lifetime (Tm) vs. Channel Temperature