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TGS2351 Datasheet(PDF) 6 Page - TriQuint Semiconductor |
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TGS2351 Datasheet(HTML) 6 Page - TriQuint Semiconductor |
6 / 11 page TGS2351 DC – 6 GHz High Power SPDT Switch Data Sheet: Rev B 06/20/12 - 6 of 11 - Disclaimer: Subject to change without notice © 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Application Circuit Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open. Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open. This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF Out port with a 50 Ohm load. Bias-up Procedure Bias-down Procedure Vc1 or Vc2 set to -40 V (see Function Table below for RF Path) Turn off RF supply Vc2 or Vc1 set to 0 V (see Function Table below for RF Path) Turn Vc1 to 0V Apply RF signal to RF Input Turn Vc2 to 0 V Function Table RF Path State Vc1 Vc2 RF In to RF Out1 (50 Ohm load to RF Out2) On-State (Insertion Loss) 0 V -40 V Off-State (Isolation) -40 V 0 V RF In to RF Out2 (50 Ohm load to RF Out1) On-State (Insertion Loss) -40 V 0 V Off-State (Isolation) 0 V -40 V 1 5 4 2, 7 3, 6 Vc2 J1 RF In Vc1 J2 RF Out1 J3 RF Out2 |
Similar Part No. - TGS2351_15 |
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Similar Description - TGS2351_15 |
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