IRLR/U3103

PD - 9.1333B

8/7/96

…

S

D

G

D - P A K

TO - 2 52 A A

I- P A K

TO - 251A A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Description

PRELIMINARY

Parameter

Max.

Units

46

…

29

…

A

Pulsed Drain Current

‡

220

Power Dissipation

69

W

Linear Derating Factor

0.56

W/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

‚‡

240

mJ

Avalanche Current

‡

34

A

Repetitive Avalanche Energy



6.9

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ‡

2.0

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Absolute Maximum Ratings

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

1.8

Junction-to-Ambient (PCB mount)**

––––

––––

50

°C/W

Junction-to-Ambient

––––

––––

110

Thermal Resistance

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994