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MAGX-001214-250L00 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-001214-250L00 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 6 page GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty MAGX-001214-250L00 Production V1 18 Aug 11 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (VDD) +65V Supply Voltage (VGS) -8 to -2V Supply Current (IDMAX) 8.8 Apk Input Power (PIN) +40 dBm Absolute Max. Junction/Channel Temp 200 ºC MTTF (TJ<200°C) 114 years Pulsed Power Dissipation at 85ºC 192 Wpk Thermal Resistance, (Tj = 70 ºC) VDD = 50V, IDQ = 250mA, Pout = 250W 300us Pulse / 10% Duty 0.60ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50V ESD Min. - Human Body Model (HBM) >250V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - 0.4 12 mA Gate Threshold Voltage VDS = 5V, ID = 30mA VGS (th) -5 -3.1 -2 V Forward Transconductance VDS = 5V, ID = 7.0mA GM 5.0 7.7 - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable—Input internally matched CISS N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 22 - pF Feedback Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 2.2 - pF |
Similar Part No. - MAGX-001214-250L00_15 |
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Similar Description - MAGX-001214-250L00_15 |
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