RH1034-1.2

2

SYMBOL PARAMETER

CONDITIONS

NOTES MIN

TYP

MAX

SUB-

GROUP

MIN

TYP

MAX

SUB-

GROUP

UNITS

1.2V Reference

1.210

1.240

1

1.195

1.255

2, 3

V

Reverse Breakdown Voltage

Change with Current

2.0

8.0

1

1

4.0

15.0

2, 3

2, 3

mV

mV

Minimum Operating Current

20

1

30

2, 3

μA

Temperature Coefficient

60

1

60

2, 3

ppm/°C

rz

Reverse Dynamic

Impedance

3

1.0

1

2.0

2, 3

Ω

Low Frequency Noise

4

Long-Term Stability

20

ppm/√kHrs

7V Reference

6.70

7.30

1

6.60

7.40

2, 3

V

Reverse Breakdown Voltage

Change with Current

140

250

1

1

190

350

2, 3

2, 3

mV

mV

Temperature Coefficient

60

ppm/°C

Long-Term Stability

20

ppm/√kHrs

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

SYMBOL PARAMETER

CONDTIONS

NOTES MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

1.2V Reference

Reverse Breakdown

Voltage

1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370

V

Reverse Breakdown

Voltage Change with

Current

7.0

15.0

7.5

16.5

8.5

18.5

10.0

22.5

12.5

30.5

mV

mV

rz

Reverse Dynamic

Impedance

3

3.5

3.75

4.25

5.0

6.25

Ω

7V Reference

Reverse Breakdown

Voltage

6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334

V

Reverse Breakdown

Voltage Change with

Current

175

300

175

300

175

300

175

300

175

300

mV

mV

10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)

Note 2: Forward biasing either diode will affect the operation of the other

diode.

Note 3: This parameter guaranteed by “reverse breakdown voltage change

with current” test.