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RH1034-1 Datasheet(PDF) 2 Page - Linear Technology |
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RH1034-1 Datasheet(HTML) 2 Page - Linear Technology |
2 / 4 page RH1034-1.2 2 TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX SUB- GROUP MIN TYP MAX SUB- GROUP UNITS 1.2V Reference VZ Reverse Breakdown Voltage IR = 100μA 1.210 1.240 1 1.195 1.255 2, 3 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 20μA ≤ IR ≤ 2mA 2mA ≤ IR ≤ 20mA 2.0 8.0 1 1 4.0 15.0 2, 3 2, 3 mV mV Minimum Operating Current 20 1 30 2, 3 μA Temperature Coefficient IR = 100μA 60 1 60 2, 3 ppm/°C rz Reverse Dynamic Impedance IR = 100μA 3 1.0 1 2.0 2, 3 Ω Low Frequency Noise IR = 100μA, 0.1Hz ≤ f ≤ 10Hz 4 μVP-P Long-Term Stability IR = 100μA 20 ppm/√kHrs 7V Reference VZ Reverse Breakdown Voltage IR = 100μA 6.70 7.30 1 6.60 7.40 2, 3 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 100μA ≤ IR ≤ 1mA 1mA ≤ IR ≤ 20mA 140 250 1 1 190 350 2, 3 2, 3 mV mV Temperature Coefficient IR = 100μA 60 ppm/°C Long-Term Stability IR = 100μA 20 ppm/√kHrs TA = 25°C –55°C ≤ TA ≤ 125°C Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. TABLE 2: ELECTRICAL CHARACTERISTICS (Postirradiation) T A = 25°C. SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.2V Reference VZ Reverse Breakdown Voltage IR = 100μA 1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 20μA ≤ IR ≤ 2mA 2mA ≤ IR ≤ 20mA 7.0 15.0 7.5 16.5 8.5 18.5 10.0 22.5 12.5 30.5 mV mV rz Reverse Dynamic Impedance IR = 100μA 3 3.5 3.75 4.25 5.0 6.25 Ω 7V Reference VZ Reverse Breakdown Voltage IR = 100μA 6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 100μA ≤ IR ≤ 1mA 1mA ≤ IR ≤ 20mA 175 300 175 300 175 300 175 300 175 300 mV mV 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by “reverse breakdown voltage change with current” test. |
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