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AN3040 Datasheet(PDF) 15 Page - STMicroelectronics |
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AN3040 Datasheet(HTML) 15 Page - STMicroelectronics |
15 / 27 page AN3040 Experimental results Doc ID 16181 Rev 2 15/27 4 Experimental results The schematic of the tested board is shown in Figure 3. The board has been tested for efficiency, power factor, total harmonic distortion and thermal behavior for the input voltage range. Table 2 and Table 3 show the results obtained for a 45-minute test. All the results are very good. Efficiency is approximately 85%, the power factor corrector is constantly 0.9 and THD is lower than 10%. With regard to the thermal behavior, it is easy to deduct fromTable 3 that there is a good safety margin from the maximum junction temperature of the MOSFET. 4.1 Start sequence As shown in Figure 5, it is during the start sequence that, as the IC supply voltage VCC reaches VCCon, the half-bridge starts oscillating and the charge capacitor connected to TCH begins charging. When the voltage at the TCH pin reaches VCHP (4.63 V), the same capacitor is discharged following an exponential decrease steered by the time constant; this defines the preheating time. During this time, the EOI pin is forced to ground and the switching frequency is set by the oscillator to the preheating value. When the voltage at the TCH pin drops down to 1.53 V, the EOI pin is exponentially charged according to a time constant that defines the ignition time. Table 2. 4 x 18 W T8 board performance VIN(V) PIN(W) POUTlamp1-2(W) η IIN(A) PF THD(%) 85 82.3 34.4 83.6% 0.9 0.99 6 110 80 34.4 86% 0.997 0.99 4.4 140 78.5 34.4 87.6% 0.555 0.99 5.5 185 78.4 34.4 87.7% 0.424 0.98 6.5 230 77.7 34.4 88.5% 0.344 0.97 8.5 265 77.2 34.4 89.1% 0.301 0.95 10 Table 3. 4 x 18 W T8 thermal results of critic system components VIN(V) Ambient temp (°C) Temp MOSLowSide(°C) Temp MOSHighSide(°C) Temp MOSPFC(°C) Temp L6585DE(°C) 85 25 54 55 120 44 110 25 53 54 108 43 140 25 53 54 102 43 185 25 53 54 94 43 230 25 53 54 84 43 265 25 53 54 74.5 43 |
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