2SJ647_15 datasheet(3/8 Pages) RENESAS

Part #	2SJ647

Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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MOS FIELD EFFECT TRANSISTOR

2SJ647

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D16530EJ1V0DS00 (1st edition)

Date Published

January 2003 NS CP(K)

Printed in Japan

2003

DESCRIPTION

The 2SJ647 is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ647 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 1.45

Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

RDS(on)2 = 1.55

Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

RDS(on)3 = 2.98

Ω MAX. (VGS = −2.5 V, ID = −0.15 A)

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ647

SC-70 (SSP)

Remark Marking: H22

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC) (TA = 25°C)

ID(DC)

m0.4

A

Drain Current (pulse)

Note1

ID(pulse)

m1.6

A

Total Power Dissipation

Note2

PT

0.2

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 2500 mm

2 x 1.1 mm.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution

This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.

PACKAGE DRAWING (Unit: mm)

2.1 ± 0.1

1.25 ± 0.1

2

1

3

Marking

1 : Source

2 : Gate

3 : Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

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