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AN2386 Datasheet(PDF) 5 Page - STMicroelectronics

Part # AN2386
Description  How to achieve the threshold voltage thermal coefficient
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2386 Datasheet(HTML) 5 Page - STMicroelectronics

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AN2386
MOS structure
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1
MOS structure
As it is well known, a MOS structure is composed by three layers: the first one is metal or
heavily doped polycrystalline silicon, the second one is an insulator of SiO2 and the third
one is the semiconductor (see Figure 1.).
Figure 1.
Cross section view of a MOS capacitor
Considering an ideal MOS system with a p-doped semiconductor, the energy band diagram
can be illustrated as in Figure 2.
Figure 2.
Energy band diagram of an ideal MOS capacitor under thermal
equilibrium.
q
Φm is the work function (energy that needs to extract an electron from the metal); q ΦB is
the energy difference between the oxide conduction band and the metal Fermi energy level
(metal-to-oxide barrier energy); q
Φsc is the work function of the semiconductor; q χ is the
energy difference between the vacuum level and the conduction band edge.
When a negative voltage (Vg) is applied on the gate terminal respect to the semiconductor,
the Fermi level of the metal raises of qVg compared to the semiconductor side. In moving
from the semiconductor to the metal, the vacuum level must bend up gradually to


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