Electronic Components Datasheet Search |
|
AN4150 Datasheet(PDF) 6 Page - STMicroelectronics |
|
AN4150 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 20 page Synchronous buck converter description AN4150 6/20 Doc ID 023526 Rev 1 In these conditions, it is interesting to analyze the switching transients. In Figure 2, the HS and LS waveforms during LS turn-off are reported. The top half of the image shows HS VGS (purple trace) and ID (grey trace), while the bottom half shows LS VGS (red trace), VDS (blue trace), IG (light blue trace) and ID (light green trace). The main LS turn-on steps are analyzed in detail, as follows: 1. Low-side FET is in an ON state (in this case, VGG = 5 V), with load current flowing from source to drain (green trace). At the end of (1), the driver begins to turn off the FET. 2. VGS goes down from VGG to Vth and the gate current becomes negative and starts to remove the charge stored in the device intrinsic capacitances. At the end of (2), the gate-source voltage becomes equal to the threshold voltage (VGS = Vth): so, the gate current is dropped to low values (intrinsic caps are discharged) and the load current diverts from the Power MOSFET channel to the body-drain diode. 3. During deadtime, the LS FET is in an OFF state (VGS = 0), VDS becomes negative (VDS = -VF,DIODE) and the load current flows through the body-drain diode. As a consequence, minority excess charge in both diode regions is created. 4. The LS current decreases linearly, while the HS current increases linearly in direct proportion to the fall of the LS FET current. To completely turn off the LS device, the excess stored charge in its body diode must be removed: so, the reverse recovery process generates an extra-current (IRR), which adds to the HS current. The maximum HS current peak is, therefore, given by: ID,HS = ILOAD + IRR The spurious bouncing on the LS gate signal is caused by the voltage drop across package parasitic inductances (especially, source inductance), related to negative dl/dt (the current is falling to zero). Obviously, the bigger the parasitic inductance (package, wire bonding and layout) the higher the bouncing amplitude. At the same time, the low- side VDS is fixed by the parasitic inductance and dlD,LS/dt. During device turn-off, the gate current is negative, because of the Power MOSFET intrinsic capacitances discharge process. The current is sunk by the driver, with a speed linked to the gate voltage level and overall gate resistance (RG,TOT = RG,INT + RDR,SINK). It is important to underline that, at LS turn-off, the driver, external and intrinsic FET gate resistance should be as low as possible in order to minimize the device shoot-through risks, caused by high dv/dt across drain-source, coupled to the gate signals through Miller capacitance in Figure 3. |
Similar Part No. - AN4150 |
|
Similar Description - AN4150 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |