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PINDIODESCHIP Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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PINDIODESCHIP Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 7 page  V20 Silicon PIN Chips ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 Low Capacitance PIN Specification @ TAMB = +25°C Part Number Max. Rev. Voltage3 VR <10 µA VDC Max. Cap. 1 MHz Cj @ -10 V pF Max. Series Res. 500 MHz RS @ 10 mA Ω Nominal Characteristics Carrier Lifetime1 TL ηS Reverse Recovery Time 2 TRR ηS I Region Length μm Theta °C/W Anode Diameter ± 0.5 mils Chip Size ± 0.5 mils Chip Thk. ± 0.5 mils MA4P161-134 100 0.10 1.50 150 15 13 65 3.5 13X13 6 MA4P203-134 100 0.15 1.50 150 25 13 75 3.1 13X13 6 MADP-000165-01340W 200 0.06 2.50 200 20 19 30 1.8 13X13 7 MADP-000135-01340W 200 0.15 1.20 440 44 19 30 3.1 13x13 10 MA4P7493-134 150 0.05 1.80 80 8 19 60 3.8 13X13 6.5 Notes: 1. Nominal carrier life time (TL ) specified at IF = + 10mA , IREV = - 6mA. 2. Nominal reverse recovery time specified at IF = + 20mA , IREV = - 200mA. 3. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10μA. Attenuator PIN Specification @ TAMB = +25°C Part Number Max. Rev. Voltage2 VR <10 µA VDC Max. Cap. 1MHz Cj @ -100 V pF Max. Series Res. 100MHz RS @ 10 mA Ω Nominal Characteristics Carrier Lifetime1 TL μS Series Res. 100MHz RS @ 10 μA Ω Series Res. 100MHz RS @ 1 mA Ω I Region Length mils Theta °C/W Anode Diameter ± 0.5 mils Chip Size ± 2 mils Chip Thk. ± 1 mils MA47416-132 200 0.15 6 2 2000 30 4 30 7.5 X7.5 3 19X19 7 MA47418-134 200 0.15 3 1 500 15 2 25 7.5 13X13 7 Notes: 1. Nominal carrier life time (TL) specified at IF = + 10mA, IREV = - 6mA. 2. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10μA. 3. Anode top contact is square. |
Similar Part No. - PINDIODESCHIP_15 |
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Similar Description - PINDIODESCHIP_15 |
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