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LDTA115TET1G Datasheet(PDF) 1 Page - Leshan Radio Company

Part # LDTA115TET1G
Description  Bias Resistor Transistor
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LDTA115TET1G Datasheet(HTML) 1 Page - Leshan Radio Company

  LDTA115TET1G_15 Datasheet HTML 1Page - Leshan Radio Company LDTA115TET1G_15 Datasheet HTML 2Page - Leshan Radio Company LDTA115TET1G_15 Datasheet HTML 3Page - Leshan Radio Company  
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Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
O8
100
3000/Tape & Reel
LESHAN RADIO COMPANY, LTD.
1/3
10000/Tape & Reel
We declare that the material of product compliance with
RoHS requirements.
LDTA115TET1G
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Inverter, Interface, Driver
Features
Applications
LDTA115TET1G
LDTA115TET1G
O8
3
COLLECTOR
2
EMITTER
1
BASE
R1
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
Power dissipation
Junction temperature
Storage temperature
-
100
-
Electrical characteristics (Ta=25
°C)
1
2
3
SC-89
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−50
−50
−5
−100
200
150
−55 to +150
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
−50
−50
−5
100
70
250
250
100
−0.5
−0.5
−0.3
600
130
V
V
V
µA
µA
V
MHZ
k
IC
= −50µA
IC
= −1mA
IE
= −50µA
VCB
= −50V
VEB
= −4V
IC/IB
= −1mA/−0.1mA
IC
= −1mA , VCE= −5V
VCE
= −10V , IE=5mA , f=100MHZ
∗Characteristics of built-in transistor
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Input resistance
Transition frequency


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