Electronic Components Datasheet Search |
|
RJJ0315DPA Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJJ0315DPA Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0388EJ0400 Rev.4.00 Page 1 of 6 Mar 22, 2013 Datasheet RJJ0315DPA -30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS -20/+10 V Drain current ID –35 A Drain peak current ID(pulse) Note1 –140 A Body-drain diode reverse drain current IDR –35 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10s, duty cycle 1 % 2. Tc = 25°C R07DS0388EJ0400 Rev.4.00 Mar 22, 2013 |
Similar Part No. - RJJ0315DPA_15 |
|
Similar Description - RJJ0315DPA_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |