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KRC863U Datasheet(HTML) 1 Page - KEC(Korea Electronics)

Part No. KRC863U
Description  EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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KRC863U Datasheet(HTML) 1 Page - KEC(Korea Electronics)

   
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2002. 7. 10
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC860U~KRC864U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
T
6
4
1.3 0.1
A1
5
+_
+_
+_
+_
+_
1. Q EMITTER
4. Q EMITTER
3. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25
)
MARK SPEC
R1
C
E
B
Type Name
12
3
6
54
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
PC *
200
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
100
nA
DC Current Gain
hFE
VCE=5V, IC=1mA
120
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=0.5mA
-
0.1
0.3
V
Transition Frequency
fT *
VCE=10V, IC=5mA
-
250
-
MHz
Input Resistor
KRC860U
R1
-
4.7
-
k
KRC861U
-
10
-
KRC862U
-
100
-
KRC863U
-
22
-
KRC864U
-
47
-
TYPE
KRC860U
KRC861U
KRC862U
KRC863U
KRC864U
MARK
NK
NM
NN
NO
NP
ELECTRICAL CHARACTERISTICS (Ta=25
)
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
23
65
4
Q2
Marking
Note : * Characteristic of Transistor Only.
* Total Rating.


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