HM64YGB36100_15 datasheet(9/23 Pages) RENESAS

Part #	HM64YGB36100

Description	32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

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HM64YGB36100 Series

Rev.1.00 Jun 27, 2005 page 7 of 19

DC Characteristics

(Ta = 0 to +85

°C, V

DD = 2.5 V ± 5%)

Parameter

Symbol

Min

Max

Unit

Notes

Input leakage current

ILI



2

µA

1

Output leakage current

ILO



5

µA

2

Standby current

ISBZZ



150

mA

3

VDD operating current, excluding output drivers

IDD



550

mA

4

Quiescent active power supply current

IDD2



200

mA

5

Maximum power dissipation, including output drivers

P



2.3

W

6

Parameter

Symbol

Min

Typ

Max

Unit Notes

Output low voltage

VOL

VSS



VSS + 0.4

V

7

Output high voltage

VOH

VDDQ

− 0.4



VDDQ

V

8

ZQ pin connect resistance

RQ



250



Ω

Output “Low” current

IOL

(VDDQ/2) / {(RQ/5)

− 15%}

(VDDQ/2) / {(RQ/5) + 15%}

mA

9, 11

Output “High” current

IOH

(VDDQ/2) / {(RQ/5) + 15%}

(VDDQ/2) / {(RQ/5)

− 15%}

mA

10, 11

Notes: 1. 0

≤ VIN ≤ VDDQ for all input pins (except VREF, ZQ, M1, M2 pin)

2. 0

≤ VOUT ≤ VDDQ, DQ in high-Z

3. All inputs (except clock) are held at either VIH or VIL, ZZ is held at VIH, IOUT = 0 mA. Specification is

guaranteed at +75

°C junction temperature.

4. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = min. cycle

5. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = 3 MHz

6. Output drives a 12 pF load and switches every cycle. This parameter should be used by the SRAM designer

to determine electrical and package requirements for the SRAM device.

7. RQ = 250

Ω, IOL = 6.8 mA

8. RQ = 250

Ω, IOH = −6.8 mA

9. Measured at VOL = 1/2 VDDQ

10. Measured at VOH = 1/2 VDDQ

11. The total external capacitance of ZQ pin must be less than 7.5 pF.

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HM64YGB36100 Datasheet(PDF) 9 Page - Renesas Technology Corp

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