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KTB764 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTB764 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  1999. 11. 30 1/3 SEMICONDUCTOR TECHNICAL DATA KTB764 TRIPLE DIFFUSED PNP TRANSISTOR Revision No : 2 VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE FEATURES High Voltage : VCEO=-50V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to KTD863. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L 7.20 MAX 5.20 MAX 2.50 MAX 0.60 MAX 1.27 1.70 MAX 0.55 MAX 14.00 0.50 0.35 MIN 0.75 0.10 4 F J M O Q 25 1.25 Φ1.50 0.10 MAX DEPTH:0.2 123 B C Q K FF M M N N H L D C N P HH E H S 12.50 0.50 R 1.00 S 1.15 MAX +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) Note : hFE(1) Classification O:60 120, Y:100 200, GR:160 320 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -1 A Pulse ICP -2 Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -1 A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 A DC Current Gain hFE(1) VCE=-2V, IC=-50mA 60 - 320 hFE(2) VCE=-2V, IC=-1A 30 - - Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -50 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V Transition Frequency fT VCE=-10V, IC=-50mA - 150 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 20 - pF |
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Similar Description - KTB764 |
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