V6W60C-M3

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Vishay General Semiconductor

Revision: 04-Dec-13

1

Document Number: 89967

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-252 (D-PAK)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

PRIMARY CHARACTERISTICS

2 x 3 A

60 V

80 A

0.41 V

150 °C

Package

TO-252 (D-PAK)

Diode variation

Dual common cathode

TO-252 (D-PAK)

A

K

HEATSINK

A

V6W60C

A

A

K

TMBS

®

PARAMETER

SYMBOL

V6W60C

UNIT

Maximum repetitive peak reverse voltage

60

V

Maximum average forward rectified current



(fig. 1)

per device

6

A

per diode

3

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

80

A

Operating junction and storage temperature range

-40 to +150

°C