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V10PL45-M3 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. V10PL45-M3
Description  Trench MOS Barrier Schottky Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

V10PL45-M3 Datasheet(HTML) 3 Page - Vishay Siliconix

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V10PL45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
3
Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
Instantaneous Forward Voltage (V)
T
A = 150 °C
T
A = 25 °C
T
A = 100 °C
T
A = 125 °C
0.001
0.01
0.1
1
10
100
1000
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A = 150 °C
T
A = 125 °C
T
A = 100 °C
T
A = 25 °C
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
100
1
0.01
10
100
0.1
1
10
Junction to Ambient


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