V12P12_15 datasheet(1/5 Pages) VISHAY

Part #	V12P12

Description	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A

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Manufacturer	VISHAY [Vishay Siliconix]

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V12P12

www.vishay.com

Vishay General Semiconductor

Revision: 16-Dec-14

1

Document Number: 89094

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.51 V at IF = 6 A

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters and polarity protection

applications.

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available



- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912



MECHANICAL DATA

Case: TO-277A (SMPC)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant

and

AEC-Q101 qualified



Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified



(“_X” denotes revision code e.g. A, B,.....)

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test



PRIMARY CHARACTERISTICS

IF(AV)

12 A

VRRM

120 V

IFSM

150 A

EAS

100 mJ

VF at IF = 12 A

0.63 V

TJ max.

150 °C

Package

TO-277A (SMPC)

Diode variations

Single die

K

2

1

TO-277A (SMPC)

TMBS

® eSMP® Series

Anode 1

Anode 2

Cathode

K

Available

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P12

UNIT

Device marking code

V1212

Maximum repetitive peak reverse voltage

VRRM

120

V

Maximum average forward rectified current (fig. 1)

IF(AV)

12

A

Peak forward surge current 10 ms single half sine-wave



superimposed on rated load

IFSM

150

A

Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 °C

EAS

100

mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C

IRRM

0.5

A

Operating junction and storage temperature range

TJ, TSTG

-40 to +150

°C

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