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IRFR9310TRL Datasheet(PDF) 1 Page - Lucky Light Electronic |
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IRFR9310TRL Datasheet(HTML) 1 Page - Lucky Light Electronic |
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1 / 7 page  www.kersemi.com 1 Power MOSFET IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 FEATURES • P-Channel • Surface Mount (IRFR9310/SiHFR9310) • Straight Lead (IRFU9310/SiHFU9310) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 400 RDS(on) (Ω)VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single S G D P-Channel MOSFET D PAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9310PbF IRFR9310TRLPbFa IRFR9310TRPbFa IRFR9310TRRPbFa IRFU9310PbF SiHFR9310-E3 SiHFR9310TL-E3a SiHFR9310T-E3a SiHFR9310TR-E3a SiHFU9310-E3 SnPb IRFR9310 IRFR9310TRLa IRFR9310TRa - IRFU9310 SiHFR9310 SiHFR9310TLa SiHFR9310Ta - SiHFU9310 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 400 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 1.8 A TC = 100 °C - 1.1 Pulsed Drain Currenta IDM - 7.2 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 92 mJ Repetitive Avalanche Currenta IAR - 1.8 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C PD 50 W Peak Diode Recovery dV/dtc dV/dt - 24 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d |
Similar Part No. - IRFR9310TRL_15 |
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Similar Description - IRFR9310TRL_15 |
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