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AN4434 Datasheet(PDF) 11 Page - STMicroelectronics

Part # AN4434
Description  CMOS F8H automotive EEPROM cycling endurance and data retention
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4434 Datasheet(HTML) 11 Page - STMicroelectronics

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DocID025810 Rev 3
11/17
AN4434
Data retention
16
2.2
CMOS F8H automotive process and MXXxxx-A125/A145
data retention performance
2.2.1
Data retention and temperature dependence
The CMOS F8H automotive EEPROM (MXXxxx-A125/A145) data retention is temperature
dependent and is independent of the value of VCC: the higher the temperature, the lower the
data retention time (as clearly shown in Figure 2).
Figure 2. Years of data retention versus temperature
The data retention safe values are:
more than 100 years (at 25°C or less)
more than 40 years (at 55°C)
more than 20 years (at 85°C)
more than 12 years (at 125°C)(d)
more than 10 years (at 145°C).
2.2.2
Data retention qualification method
Data retention qualification procedure for the CMOS F8H automotive EEPROMs checks
that the data written into the EEPROM remain readable with a safe programming level. The
ST qualification method is:
the part is cycled according to the max cycling values defined in the data sheet, at
several temperatures,
the part is stored in an oven for 8000h @200°C (no supply voltage on pin VCC),
the part content is then checked.
d. After cycling the device 100 kcycles at 150°C, the data retention safe value is 50 years (at 125°C).
0
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-50
-30
-10
1030507090
110
130
150
Data retention (years) versus temperature (°C)
°C


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