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SBR30A60CT-G Datasheet(PDF) 2 Page - Diodes Incorporated |
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SBR30A60CT-G Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page SBR is a registered trademark of Diodes Incorporated. SBR30A60CT, SBR30A60CTFP Document number: DS30982 Rev. 10 - 2 2 of 5 www.diodes.com January 2015 © Diodes Incorporated SBR30A60CT SBR30A60CTFP Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VRM 60 V Average Rectified Output Current IO 30 A Non-Repetitive Avalanche Energy (TJ = +25°C, IAS = 20A, L = 8.5mH, tp = 1ms) EAS 400 mJ Repetitive Peak Avalanche Energy (1µs, +25°C) PARM 8,600 W Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 250 A Peak Repetitive Reverse Surge Current (2µS - 1Khz) IRRM 3 A Isolation Voltage (ITO-220AB Only) From Terminal to Heatsink t = 3 sec. VAC 2,000 V Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Thermal Resistance Junction to Ambient (Note 6) Thermal Resistance Junction to Case (Note 6) RθJA RθJC 10.6 2 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop VF - - 0.53 0.60 0.55 V IF = 15A, TJ = +25°C IF = 15A, TJ = +125°C Leakage Current (Note 7) IR - - 0.5 60 mA VR = 60V, TJ = +25°C VR = 60V, TJ = +125°C Notes: 6. Test Device on Heatsink (Black Aluminum, 50mm x 50mm x 23mm). 7. Short duration pulse test used to minimize self-heating effect. 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 I , AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation F(AV) 0.0001 0.001 0.01 0.1 1 10 100 0 200 400 600 800 V , INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics F |
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