Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

V10D120C-M3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # V10D120C-M3
Description  Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

V10D120C-M3 Datasheet(HTML) 2 Page - Vishay Siliconix

  V10D120C-M3 Datasheet HTML 1Page - Vishay Siliconix V10D120C-M3 Datasheet HTML 2Page - Vishay Siliconix V10D120C-M3 Datasheet HTML 3Page - Vishay Siliconix V10D120C-M3 Datasheet HTML 4Page - Vishay Siliconix V10D120C-M3 Datasheet HTML 5Page - Vishay Siliconix V10D120C-M3 Datasheet HTML 6Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 27-Nov-14
2
Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
 5 ms
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage per diode
IF = 2.5 A
TA = 25 °C
VF (1)
0.61
-
V
IF = 5 A
0.79
0.94
IF = 2.5 A
TA = 125 °C
0.53
-
IF = 5 A
0.64
0.72
Reverse current at rated VR per diode
VR = 90 V
TA = 25 °C
IR (2)
2.3
-
μA
TA = 125 °C
2.3
-
mA
VR = 120 V
TA = 25 °C
-
500
μA
TA = 125 °C
5
15
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D120C
UNIT
Typical thermal resistance
per diode
RJC
3.5
°C/W
per device
2.5
per device
RJA (1)(2)
48
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AC (SMPD)
V10D120C-M3/I
0.55
I
2000/reel
13" diameter plastic tape and reel
TO-263AC (SMPD)
V10D120CHM3/I (1)
0.55
I
2000/reel
13" diameter plastic tape and reel
0
2
4
6
8
10
12
0
25
50
75
100
125
150
Case Temperature (°C) (D = duty cycle = 0.5)
R
thJA = 48 °C/W
R
thJC = 2.5 °C/W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
0
123456
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp


Similar Part No. - V10D120C-M3

ManufacturerPart #DatasheetDescription
logo
Vishay Siliconix
V10D120C-M3/I VISHAY-V10D120C-M3/I Datasheet
127Kb / 5P
   Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A
Revision: 24-Mar-2020
V10D120C-M3 VISHAY-V10D120C-M3_15 Datasheet
99Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 06-Feb-15
More results

Similar Description - V10D120C-M3

ManufacturerPart #DatasheetDescription
logo
Vishay Siliconix
V30202C VISHAY-V30202C Datasheet
166Kb / 6P
   Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 31-Oct-14
V20200G VISHAY-V20200G_15 Datasheet
157Kb / 5P
   Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A
Revision: 16-Aug-13
V60170PW VISHAY-V60170PW Datasheet
92Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 20-Nov-12
V40100K VISHAY-V40100K_15 Datasheet
132Kb / 4P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 17-Aug-15
V10D202C VISHAY-V10D202C Datasheet
105Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 10-Feb-15
V30150C VISHAY-V30150C_12 Datasheet
169Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09
V30200C VISHAY-V30200C_09 Datasheet
160Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09
V40100C VISHAY-V40100C_11 Datasheet
140Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Mar-11
V40100G VISHAY-V40100G_11 Datasheet
131Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Mar-11
V40150C VISHAY-V40150C_09 Datasheet
162Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09
VT3060C VISHAY-VT3060C Datasheet
131Kb / 5P
   Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Mar-11
More results


Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com