V12W60C-M3_15 datasheet(2/5 Pages) VISHAY

Part #	V12W60C-M3

Description	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A

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Manufacturer	VISHAY [Vishay Siliconix]

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V12W60C-M3

www.vishay.com

Vishay General Semiconductor

Revision: 04-Dec-13

2

Document Number: 89972

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 5 ms

Notes

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA

(2) Free air, without heatsink

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 3 A

TA = 25 °C

VF (1)

0.47

-

V

IF = 6 A

0.52

0.62

IF = 3 A

TA = 125 °C

0.38

-

IF = 6 A

0.47

0.58

Reverse current per diode

VR = 60 V

TA = 25 °C

IR (2)

-3500

μA

TA = 125 °C

9

27

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12W60C

UNIT

Typical thermal resistance

per diode

RJC

2.8

°C/W

per device

1.4

per device

RJA (1) (2)

65

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V12W60C-M3/I

0.38

I

2500/reel

13" diameter plastic tape and reel

0

2

4

6

8

10

12

14

0

255075

100

125

150

Case Temperature (

°C)

TA ,RthJA=65oC/W

RthJA=RthJC=1.4oC/W

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

23

45

67

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = tp/T

T

tp

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