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FP0045E Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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FP0045E Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 3 page  NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF60P05M SFF60P05Z Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250A) BVDSS -50 -70 –– Volts Drain to Source On State Resistance (VGS = -10V, ID = 60A) RDS(on)1 –– 0.021 0.033 Drain to Source On State Resistance (VGS = -10V, ID = 30A) RDS(on)2 –– 0.021 –– Gate Threshold Voltage (VDS = VGS, ID = -250A) VGS(th) -2.0 -2.8 -4.0 Volts Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID) gfs –– 50 –– S Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0V) (VDS = 40 V, VGS = 0V) TA = 25 oC TA = 125 oC IDSS –– –– 0.005 –– 1 50 A Gate to Source Leakage (For Gate to Source Leakage At Rated VGS IGSS –– –– -10 10 -100 100 A Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10V VDD = 40V ID = 60A Qg Qgs Qgd –– –– –– 200 20 80 300 50 125 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VDD = 25 V ID = 30 A RL = 6.2 t(on) td(on) tr –– –– –– –– 40 20 125 –– –– ns t(off) td(off) tf –– –– –– –– 90 60 225 –– –– Diode Forward Voltage IS = Rated ID VGS = 0V TJ = 25ºC VSD –– -1.3 -1.9 Volts Diode Reverse Recovery Time IF = 10A di/dt = 100A/usec trr Qrr –– –– 140 –– 200 –– ns C Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = -25V f = 1 MHz Ciss Coss Crss –– –– –– 6000 1800 500 –– –– –– pF |
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Similar Description - FP0045E_15 |
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