SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1995

7

FEATURES

*

High gain and low saturation voltages

COMPLEMENTARY TYPE –

BCX68

PARTMARKING DETAIL –

BCX69

– CJ

BCX69-16 – CG

BCX69-25 – CH

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-25

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-5

V

Peak Pulse Current

-2

A

Continuous Collector Current

-1

A

1W

Operating and Storage Temperature Range

-65 to +150

°C

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown voltage

-25

V

IC =-100

µA

Collector-Emitter

Breakdown Voltage

-20

V

IC =-10mA

Emitter-Base

Breakdown Voltage

-5

V

Collector Cut-Off

Current

-0.1

-10

µA

µA

Emitter Cut-Off Current

-10

µA

Collector-Emitter

Saturation Voltage

-0.5

V

Base-Emitter Turn-On

Voltage

-1.0

V

Static Forward Current

Transfer Ratio

BCX69-16

BCX69-25

50

85

60

100

160

250

375

250

400

Transition Frequency

100

MHz

f=100MHz

Output Capacitance

25

pF

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT549 datasheet.

BCX69

C

C

B

E

SOT89

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