5

LT1167

ELECTRICAL CHARACTERISTICS

LT1167AI

LT1167I

SYMBOL

PARAMETER

CONDITIONS (Note 7)

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

Gain Error

G = 1

q

0.014

0.04

0.015

0.05

%

G = 10 (Note 2)

q

0.130

0.40

0.140

0.42

%

G = 100 (Note 2)

q

0.140

0.40

0.150

0.42

%

G = 1000 (Note 2)

q

0.160

0.40

0.180

0.45

%

Gain Nonlinearity (Notes 2, 4)

q

2

15

3

20

ppm

q

5

20

6

30

ppm

q

26

70

30

100

ppm

G/T

Gain vs Temperature

G < 1000 (Note 2)

q

20

50

20

50

ppm/

°C

Total Input Referred

Offset Voltage

Input Offset Voltage

q

20

75

25

100

µV

Input Offset Voltage Hysteresis

(Notes 3, 6)

3.0

3.0

µV

Output Offset Voltage

q

180

500

200

600

µV

Output Offset Voltage Hysteresis (Notes 3, 6)

30

30

µV

Input Offset Drift (RTI)

(Note 3)

q

0.05

0.3

0.06

0.4

µV/°C

Output Offset Drift

(Note 3)

q

0.8

5

1

6

µV/°C

Input Offset Current

q

110

550

120

700

pA

Input Offset Current Drift

q

0.3

0.3

pA/

°C

Input Bias Current

q

180

600

220

800

pA

Input Bias Current Drift

q

0.5

0.6

pA/

°C

Input Voltage Range

q

V

q

V

CMRR

Common Mode Rejection Ratio

1k Source Imbalance,

G = 1

q

86

90

81

90

dB

G = 10

q

98

105

95

105

dB

G = 100

q

114

118

112

118

dB

G = 1000

q

116

133

112

133

dB

PSRR

Power Supply Rejection Ratio

G = 1

q

100

112

95

112

dB

G = 10

q

120

125

115

125

dB

G = 100

q

125

132

120

132

dB

G = 1000

q

128

140

125

140

dB

Supply Current

q

1.1

1.6

1.1

1.6

mA

Output Voltage Swing

q

V

q

V

Output Current

q

15

20

15

20

mA

SR

Slew Rate

q

0.55

0.95

0.55

0.95

V/

µs

REF Voltage Range

(Note 3)

q

V

temperature range.

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be imparied.

Note 3: This parameter is not 100% tested.

Note 4: The LT1167AC/LT1167C are designed, characterized and expected

to meet the industrial temperature limits, but are not tested at – 40

°C and

85

°C. I-grade parts are guaranteed.

Note 5: This parameter is measured in a high speed automatic tester that

does not measure the thermal effects with longer time constants. The

magnitude of these thermal effects are dependent on the package used,

heat sinking and air flow conditions.

Note 6: Hysteresis in offset voltage is created by package stress that

differs depending on whether the IC was previously at a higher or lower

temperature. Offset voltage hysteresis is always measured at 25

°C, but

the IC is cycled to 85

°C I-grade (or 70°C C-grade) or –40°C I-grade

(0

°C C-grade) before successive measurement. 60% of the parts will

pass the typical limit on the data sheet.

Note 7: Typical parameters are defined as the 60% of the yield parameter

distribution.