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LT1187M Datasheet(PDF) 4 Page - Linear Technology |
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LT1187M Datasheet(HTML) 4 Page - Linear Technology |
4 / 12 page LT1187 4 LT1187C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VOS Input Offset Voltage Either Input, (Note 4) 2.0 12 mV ∆VOS/∆T Input VOS Drift 9.0 µV/°C IOS Input Offset Current Either Input 0.2 1.5 µA IB Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range – 2.5 3.5 V CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 70 100 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 65 85 dB VOUT Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.7 ±4.0 V VS = ±8V, RL = 1k, AV = 50 ±6.6 ±7.0 VS = ±8V, RL = 300Ω, AV = 50, (Note 3) ±6.4 ±6.8 GE Gain Error VO = ±1V, AV = 10, RL = 1k 0.2 1.0 % IS Supply Current 13 17 mA Shutdown Supply Current Pin 5 at V –, (Note 11) 0.8 1.5 mA IS/D Shutdown Pin Current Pin 5 at V – 525 µA LT1187C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VOS Input Offset Voltage Either Input, (Note 4) 2.0 12.0 mV SOIC Package 2.0 13.0 mV ∆VOS/∆T Input VOS Drift 9.0 µV/°C IOS Input Offset Current Either Input 0.2 1.5 µA IB Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range 2.0 3.5 V CMRR Common-Mode Rejection Ratio VCM = 2.0V to 3.5V 70 100 dB VOUT Output Voltage Swing RL = 300Ω to Ground VOUT High 3.5 4.0 V (Note 3) VOUT Low 0.15 0.4 IS Supply Current 12 16 mA Shutdown Supply Current Pin 5 at V –, (Note 11) 0.8 1.5 mA IS/D Shutdown Pin Current Pin 5 at V – 525 µA VS = ±5V, VREF = 0V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open. 5V VS + = 5V, V S – = 0V, VREF = 2.5V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to VREF, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open. Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted continuously. Note 2: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formulas: LT1187MJ8,LT1187CJ8: TJ = TA + (PD × 100°C/W) LT1187CN8: TJ = TA + (PD × 100°C/W) LT1187CS8: TJ = TA + (PD × 150°C/W) Note 3: When RL = 1k is specified, the load resistor is RFB1 + RFB2, but when RL = 300Ω is specified, then an additional 430Ω is added to the output such that (RFB1 + RFB2) in parallel with 430Ω is RL = 300Ω. Note 4: VOS measured at the output (pin 6) is the contribution from both input pair, and is input referred. Note 5: VIN LIM is the maximum voltage between –VIN and +VIN (pin 2 and pin 3) for which the output can respond. Note 6: Slew rate is measured between ±0.5V on the output, with a VIN step of ±0.75V, AV = 3 and RL = 1k. Note 7: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2 πVp. Note 8: Settling time measurement techniques are shown in “Take the Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985. Note 9: NTSC (3.58MHz). Note 10: AC parameters are 100% tested on the ceramic and plastic DIP packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO packaged parts (S8 suffix). Note 11: See Application section for shutdown at elevated temperatures. Do not operate shutdown above TJ > 125°C. 5V – + ELECTRICAL C C HARA TERISTICS 0°C ≤ T A ≤ 70°C, (Note 3) ELECTRICAL C C HARA TERISTICS 0°C ≤ T A ≤ 70°C, (Note 3) |
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