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FT0009B Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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FT0009B Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SFF25P20 ___ ___ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level │ │ │ │ │ └ Package 2/ S2I = SMD2 Isolated M = TO-254 SFF25P20 Series 25 AMP / 200 Volts 150 mΩ typical P-Channel MOSFET Features: • polySi gate cell structure • Low ON-resistance • UIS (unclamped inductive switching) rated • Hermetically Sealed, Isolated Package • Low package inductance • Stress relief provided by flexible leads – several options available • Improved (RDS(ON) QG) figure of merit • TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Drain - Source Voltage VDSS -200 V Gate – Source Voltage Continuous transient VGS ±20 ±30 V Max. Continuous Drain Current @ TC = 25ºC ID1 25 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 95 A Max. Avalanche current IAR 25 A Repetitive Avalanche Energy EAR 30 mJ Total Power Dissipation @ TC = 25ºC PD 250 W Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance Junction to Case R0JC 0.83 0.6 typical ºC/W NOTES: SMD 2 Isolated TO-254 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION |
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Similar Description - FT0009B_15 |
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