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MBR30H100CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR30H100CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  CREAT BY ART - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test SYMBOL UNIT VRRM V VRMS V VDC V IF(AV) A IRRM A dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D1308032 Version: I13 MBR30H100CT Taiwan Semiconductor Dual Common Cathode Schottky Rectifier FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA TO-220AB Case: TO-220AB Polarity: As marked 30 Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBR30H100CT Maximum repetitive peak reverse voltage 100 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Maximum RMS voltage 70 Maximum DC blocking voltage 100 Maximum average forward rectified current Peak repetitive reverse surge current (Note 1) 1 Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ VF Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 30 Operating junction temperature range - 55 to +175 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR μA mA V Storage temperature range - 55 to +175 Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle 0.85 0.75 0.98 0.85 10 2 Voltage rate of change (Rated VR) 10000 Typical thermal resistance 2 |
Similar Part No. - MBR30H100CT_14 |
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Similar Description - MBR30H100CT_14 |
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