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MBR30L100CTC0G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR30L100CTC0G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM V VRMS V VDC V IF(AV) A IRRM A dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D1309001 Version: K13 0.77 0.50 0.56 0.67 0.40 0.48 0.50 Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle PARAMETER SYMBOL UNIT Typical thermal resistance 1 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +175 Maximum reverse current @ Rated VR TJ=25 ℃ TJ=100 ℃ IR mA Voltage rate of change (Rated VR) 10000 200 150 32 Peak repetitive reverse surge current (Note 1) 1 Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ VF V 0.55 0.60 Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 220 A Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 30 45 60 100 31 42 70 Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Maximum repetitive peak reverse voltage MBR 30L45CT MBR 30L60CT MBR 30L100CT 45 60 100 MECHANICAL DATA TO-220AB Case: TO-220AB Polarity: As marked MBR30L45CT thru MBR30L100CT Taiwan Semiconductor Dual Common Cathode Schottky Rectifier FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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