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VB10150S Datasheet(PDF) 1 Page - Vishay Siliconix |
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VB10150S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V10150S, VF10150S, VB10150S, VI10150S www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 1 Document Number: 89058 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 150 V IFSM 120 A VF at IF = 10 A 0.69 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variation Single die PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 CASE PIN 3 TO-220AB V10150S 1 2 3 TMBS ® VI10150S TO-262AA VB10150S NC A K HEATSINK NC A K TO-263AB 1 K 2 3 VF10150S ITO-220AB 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10150S VF10150S VB10150S VI10150S UNIT Max. repetitive peak reverse voltage VRRM 150 V Max. average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 70 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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