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SRAS8150 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SRAS8150 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 20 30 40 50 60 90 100 150 V VRMS 14 21 28 35 42 63 70 105 V VDC 20 30 40 50 60 90 100 150 V IF(AV) A dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D1309054 Version: I13 Storage temperature range - 55 to +150 Typical thermal resistance Operating junction temperature range 3 - 55 to +125 Voltage rate of change (Rated VR) 10000 5- -5 V 0.55 0.70 Note 1: Pulse test with PW=300μs, 1% duty cycle SRAS 820 SRAS 830 SRAS 840 SRAS 850 SRAS 860 A Maximum average forward rectified current 8 - 55 to +150 Maximum reverse current @ rated VR TJ=25 ℃ TJ=100 ℃ TJ=125 ℃ IR 0.1 mA Maximum instantaneous forward voltage (Note 1) IF= 8 A VF Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage SRAS 8100 SRAS 8150 0.95 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 SRAS 890 Polarity: As marked Weight: 1.37 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: TO-263AB (D 2PAK) Unit SRAS820 thru SRAS8150 Taiwan Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES - Moisture sensitivity level: level 1, per J-STD-020 TO-263AB (D 2PAK) |
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