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LT1684IS Datasheet(PDF) 3 Page - Linear Technology |
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LT1684IS Datasheet(HTML) 3 Page - Linear Technology |
3 / 16 page 3 LT1684 Note 1: Absolute Maximum Ratings are those values beyond which the life of the device may be impaired. Note 2: IC Supply current specification represents unloaded condition and does not include external FET gate pull up/down currents (GATE +, GATE – pins). Actual total IC bias currents will be higher and vary with operating conditions. See Applications Information. Note 3: PWM inputs are high impedance through ±100mV beyond the input thresholds. Note 4: 10k resistor from pin AMPIN to ground. Note 5: Guaranteed but not tested. The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. V + – V – = 20V, Voltages referenced to pin OUT, VOUT = VATREF unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supply and Protection IS DC Supply Current (Note 2) IN A – IN B ≥ 1.6V q 680 950 µA |V +| Local Supply Voltages VGATE+ ≥ V + q 6.5 10 V |V –|VGATE– ≤ V – VGATE+ Active Tracking Supply FET IGATE+ = –100µA, q 13.2 14.0 14.8 V Bias Voltage ATREF = 0V VGATE– Active Tracking Supply FET IGATE– = 100µA, q –14.8 –14.0 –13.2 V Bias Voltage ATREF = 0V PWM Receiver fPWM Input Carrier Frequency 10 kHz VIN Minimum Valid Differential Input IN A – IN B or IN B – IN A q 1.6 V Differential Input Threshold q 0.50 0.70 1.00 V | IN A – IN B | RIN Differential Input Overdrive Impedance VIN > VTH + 100mV q 710 k Ω (Note 3, 5) RINA,INB Single-Ended Input Impedance To Pin OUT q 50 k Ω (Note 5) BG Buffer VBGOUT BGOUT Normalized Voltage Magnitude |VBGOUT| 1.235 1.250 1.265 V q 1.225 1.250 1.275 V VBGOUTOS Output Offset Voltage –7 7 mV [(VBGOUT+) + (VBGOUT–)]/2 q –10 10 mV IBGOUTSC BGOUT Short-Circuit Current q ±2 ±4.5 mA RBGOUT BGOUT Output Impedance – 2mA ≤ IBGOUT ≤ 2mA 0.2 Ω tr BGOUT Rise Time (10% to 90%) ROUT = 5k, COUT = 10pF q 160 300 ns tf BGOUT Fall Time (10% to 90%) ROUT = 5k, COUT = 10pF q 260 400 ns ∆tr-f BGOUT RiseTime – Fall Time q – 200 –100 0 ns tpr BGOUT Propagation Delay PWM Input ROUT = 5k, COUT = 10pF q 340 500 ns Transition to 10% Output (Rising Edge) tpf BGOUT Propagation Delay PWM Input ROUT = 5k, COUT = 10pF q 440 600 ns Transition to 90% Output (Falling Edge) ∆tp BGOUT Propagation Delay q – 200 –100 100 ns Rising Edge – Falling Edge Output Amplifier VOUTOS OUT Offset Voltage VAMPIN = 0v, IOUT = 0A – 6 6 mV RAMPIN = 10k (Note 4) q –8 8 mV ROUT OUT Output Impedance –10mA ≥ ILIM+ ≥ –100mA, LIM+ Shorted to OUT 0.01 Ω 10mA ≤ IOUT ≤ 100mA, LIM– Shorted to V– 0.15 Ω IOUTSC OUT Short-Circuit Current LIM + Shorted to OUT q ±100 ±190 mA LIM – Shorted to V – ELECTRICAL CHARACTERISTICS |
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