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TSI20H150CW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSI20H150CW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM V dV/dt V/μs TYP MAX TYP MAX TYP MAX TYP MAX IF = 5A 0.57 - 0.62 - 0.72 - 0.77 - IF = 10A 0.67 0.79 0.78 0.87 0.81 0.90 0.83 0.93 IF = 5A 0.50 - 0.53 - 0.58 - 0.62 - IF = 10A 0.59 0.68 0.63 0.72 0.66 0.75 0.68 0.78 TJ = 25°C - 200 - 200 - 100 - 100 μA TJ = 125°C 825825315315 mA RθJC °C/W RθJL °C/W TJ °C TSTG °C Document Number: DS_D1411038 Version: C15 TSI20H100CW - TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifiers FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition I 2 PAK TSI20H 100CW TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: I 2PAK Molding compound meets UL 94 V-0 flammability rating Polarity: As marked Maximum repetitive peak reverse voltage Maximum average forward rectified current per device IF(AV) 20 Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL UNIT A per diode 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A TJ = 25°C V TJ = 125°C Voltage rate of change (Rated VR) 10000 VF 150 200 Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Instantaneous reverse current per diode at rated reverse voltage IR Instantaneous forward voltage per diode ( Note1 ) 2.8 3.8 - 55 to +150 - 55 to +150 TSI20H 120CW TSI20H 150CW TSI20H 200CW 100 120 1 2 3 |
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