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P6SMB Datasheet(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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P6SMB Datasheet(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
4 / 6 page CREAT BY ART Test Stand-Off Maximum Maximum Maximum Maximum Current Voltage Reverse Leakage Peak Pulse Clamping Voltage Temperature IT VWM @ VWM Current IPPM @ IPPM Coefficient Min Max (mA) (V) ID (μA) (A) (Note 2) Vc(V) of VBR(%/°C) P6SMB56 MHJ 50.4 61.6 1.0 45.4 1 7.8 80.5 0.103 P6SMB56A MKJ 53.2 58.8 1.0 47.8 1 8.1 77.0 0.103 P6SMB62 MLJ 55.8 68.2 1.0 50.2 1 7.0 89.0 0.104 P6SMB62A MMJ 58.9 65.1 1.0 53.0 1 7.4 85.0 0.104 P6SMB68 MNJ 61.2 74.8 1.0 55.1 1 6.4 98.0 0.104 P6SMB68A MPJ 64.6 71.4 1.0 58.1 1 6.8 92.0 0.104 P6SMB75 MQJ 67.5 82.5 1.0 60.7 1 5.8 108 0.105 P6SMB75A MRJ 71.3 78.8 1.0 64.1 1 6.1 103 0.105 P6SMB82 MSJ 73.8 90.2 1.0 66.4 1 5.3 118 0.105 P6SMB82A MTJ 77.9 86.1 1.0 70.1 1 5.5 113 0.105 P6SMB91 MUJ 81.9 100 1.0 73.7 1 4.8 131 0.106 P6SMB91A MVJ 86.5 95.5 1.0 77.8 1 5.0 125 0.106 P6SMB100 MWJ 90 110 1.0 81.0 1 4.3 144 0.106 P6SMB100A MXJ 95 105 1.0 85.5 1 4.5 137 0.106 P6SMB110 MYJ 99 121 1.0 89.2 1 3.9 158 0.107 P6SMB110A MZJ 105 116 1.0 94.0 1 4.1 152 0.107 P6SMB120 NDJ 108 132 1.0 97.2 1 3.6 173 0.107 P6SMB120A NEJ 114 126 1.0 102.0 1 3.8 165 0.107 P6SMB130 NFJ 117 143 1.0 105.0 1 3.3 187 0.107 P6SMB130A NGJ 124 137 1.0 111.0 1 3.5 179 0.107 P6SMB150 NHJ 135 165 1.0 121.0 1 2.9 215 0.108 P6SMB150A NKJ 143 158 1.0 128.0 1 3.0 207 0.108 P6SMB160 NLJ 144 176 1.0 130.0 1 2.7 230 0.108 P6SMB160A NMJ 152 168 1.0 136.0 1 2.8 219 0.108 P6SMB170 NNJ 153 187 1.0 138.0 1 2.5 244 0.108 P6SMB170A NPJ 162 179 1.0 145.0 1 2.6 234 0.108 P6SMB180 NQJ 162 198 1.0 146.0 1 2.4 258 0.108 P6SMB180A NRJ 171 189 1.0 154.0 1 2.5 246 0.108 P6SMB200 NSJ 180 220 1.0 162.0 1 2.1 287 0.108 P6SMB200A NTJ 190 210 1.0 171.0 1 2.2 274 0.108 P6SMB220 NUJ 198 242 1.0 175.0 1 1.8 342 0.108 P6SMB220A NVJ 209 231 1.0 185.0 1 1.9 328 0.108 Notes: 1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Document Number: DS_D1409032 Version: L15 Device Device Marking Code Breakdown Voltage VBR (V) (Note 1) P6SMB SERIES Taiwan Semiconductor |
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