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TESDE5V0 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TESDE5V0 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TESDE5V0/TESDE12V/TESDE24V Small Signal Product - Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Designed for mounting on small surface - Protects one Bi-directional I/O line - Moisture sensitivity level 1 - Working Voltage : 5V, 12V, 24V - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) - Case: 0503 small outline plastic package - High temperature soldering guaranteed : 260°C/10s - Weight: 2 ± 0.5 mg - Cell Phone Handsets and Accessories - Notebooks, Desktops, and Servers - Keypads, Side Keys, USB 2.0, LCD Displays - Portable Instrumentation - Touch Panel SYMBOL UNIT TJ, TSTG oC SYMBOL UNIT TESDE5V0 TESDE12V TESDE24V TESDE5V0 TESDE12V TESDE24V TESDE5V0 TESDE12V TESDE24V TESDE5V0 TESDE12V TESDE24V Document Number: DS_S1501017 Version: F15 Taiwan Semiconductor Bi-directional ESD Protection Diode FEATURES 0503 MECHANICAL DATA VESD KV - Terminal : Gold plated, solder per MIL-STD-705, method 2026 guaranteed APPLICATIONS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE IPP = 5 A IPP = 1 A PARAMETER MIN MAX Reverse Stand-Off Voltage VRWM VR = 24 V VR = 12 V VR = 5 V 15 -33 -2 -51 W - - - 5.1 - 5 12 24 -55 to +150 ± 8 ± 15 47 ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air) Junction and Storage Temperature Range PPP 25 75 Peak Pulse Power (tp=8/20μs waveform) TESDE24V TESDE12V TESDE5V0 13 - V Reverse Breakdown Voltage V(BR) V 25 - IR = 1 mA μA Clamping Voltage TESDE5V0 VC V - Reverse Leakage Current IR 9.8 - Clamping Voltage TESDE12V VC V -25 IPP = 5 A IPP = 1 A Clamping Voltage TESDE24V VC V -47 IPP = 5 A IPP = 1 A Junction Capacitance CJ pF 10 12 15 VR = 0 V f = 1.0 MHz |
Similar Part No. - TESDE5V0 |
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Similar Description - TESDE5V0 |
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