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SI1400DL Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI1400DL Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 71179 S10-0721-Rev. D, 29-Mar-10 www.vishay.com 3 Vishay Siliconix Si1400DL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0 0.1 0.2 0.3 0.4 0.5 0 1234 5 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V 0 0.9 1.8 2.7 3.6 4.5 0 0.5 1.0 1.5 2.0 2.5 VDS = 10 V ID = 1.7 A Qg - Total Gate Charge (nC) 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 10 0.1 VSD -) V ( e g a t l o V n i a r D - o t - e c r u o S 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 60 120 180 240 300 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 1.7 A TJ - Junction Temperature (°C) 0 0.08 0.16 0.24 0.32 0.40 01 2 3 45 ID = 1.7 A VGS - Gate-to-Source Voltage (V) |
Similar Part No. - SI1400DL_15 |
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Similar Description - SI1400DL_15 |
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