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TS19460CSRLG Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TS19460CSRLG Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 9 page TS19460 Taiwan Semiconductor Document Number: DS_P0000188 3 Version: D15 ELECTRICAL SPECIFICATIONS (T A= 25 oC, V IN= 12V, VLD=PWM=VDD, unless otherwise noted) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Average Current Sense Logic Current Sense Reference Voltage VCS 238 250 262 mV LD to Current Sense Ratio Av(LD) -- 0.18 -- mV LD input Voltage Shutdown VLD(OFF) VLD falling -- 150 -- mV LD input Voltage Enable ∆V LD(OFF) VLD rising -- 200 -- mV Current Sense Blanking Interval TBLANK 150 -- 280 ns Minimum On-Time TON(min) VCS= VCS + 30mV -- -- 1 μS Off Time TOFF RT=1MΩ 32 -- 48 μS RT=226kΩ 8 -- 12 Max. Steady-State Duty Cycle DMAX 75 -- -- % Short Circuit Protection Hiccup Threshold Voltage VCS 410 -- 470 mV Current Limit Delay CS to Gate TDELAY VCS= VCS + 30mV -- -- 150 ns Short Circuit Hiccup Time THICCUP 330 -- 460 μS Minimum On-Time (Short Circuit) TON(min) VCS= VDD -- -- 430 μS Gate Driver Gate Sourcing Current ISOURCE VGATE=0V, VDD=7.5V 165 -- -- mA Gate Sinking Current ISINK VGATE=VDD, VDD=7.5V 165 -- -- mA Gate Output Rise Time TRISE CGATE=500pF, VDD=7.5V -- 30 50 ns Gate Output Fall Time TFALL CGATE=500pF, VDD=7.5V -- 30 50 ns Note: 1. S tresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. 2. Limited by package power dissipation, whichever is lower. 3. Thermal Resistance is specified with the component mounted on a low effective thermal conductivity test board in free air at TA=25°C. 4. Denotes the specifications which apply over the full operating ambient temperature range of -40ºC<TA<+125ºC. |
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