NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0005C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number/Ordering Information

1/

SSG55N60 ___ ___

│

│

│

│

└

└

Screening

2/

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

Package Type

M = TO-254

Z = TO-254Z

N = TO-258

P = TO-259

/3 = TO-3

SSG55N60 series

55 AMP /600 Volts

1.65 V saturation

ultrafast IGBT

Features:



Lowest ON-resistance in the industry



Hermetically Sealed, Isolated Package



Low Total Gate Charge



Fast Switching



TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Breakdown Voltage

600

V

Gate – Emitter Voltage

±20

V

Max. Continuous Collector Current

55

27

A

Max. Instantaneous Drain Current (Tj limited)

200

A

Clamped Inductive Load current

L= 10 uH

200

A

Repetitive Reverse Voltage Avalanche Energy

Limited by Tj max

20

mJ

Total Power Dissipation

195

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance (Junction to Case)

0.64 (typ 0.35)

ºC/W

TO-254 (M)

TO-254Z (Z)

TO-258 (N)

TO-259 (P)

TO-3 (/3)

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25