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QSBT40 Datasheet(PDF) 2 Page - Diodes Incorporated |
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QSBT40 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page QSBT40 Document number: DS30195 Rev. 16 - 2 2 of 4 www.diodes.com September 2012 © Diodes Incorporated QSBT40 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Forward Continuous Current (Note 6) IFM 200 mA Non-Repetitive Peak Forward Surge Current @ t < 1.0s IFSM 600 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 6) RθJA 625 °C/W Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -65 to +125 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V(BR)R 30 ⎯ ⎯ V IR = 100μA Forward Voltage VF ⎯ ⎯ 280 350 450 550 1000 mV IF = 0.1mA, tp < 300µS IF = 1.0mA, tp < 300µS IF = 10mA, tp < 300µS IF = 30mA, tp < 300µS IF = 100mA, tp < 300µS Reverse Current (Note 7) IR ⎯ ⎯ 2 μA VR = 25V Total Capacitance CT ⎯ 10.0 6.5 ⎯ pF VR = 0, f = 1.0MHz (Note 8) VR = 0, f = 1.0MHZ (Note 9) Reverse Recovery Time trr ⎯ ⎯ 5.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. 8. At VR = 0V, DL(X) to VCC or GND. 9. At VR = 0V, between Data Lines (e.g., DL1 and DL4). 0 50 25 50 75 100 125 150 175 200 T , AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature A 100 150 200 0 |
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